• DocumentCode
    1516134
  • Title

    Extraction of Effective Oxide Thickness for SOI FINFETs With High- \\kappa /Metal Gates Using the Body Effect

  • Author

    Paul, Sujata ; Yeh, Frank ; Maitra, Kingsuk ; Lin, Chung-Hsun ; Kerber, Andreas ; Kulkarni, Pranita ; Jagannathan, Hemanth ; Basker, Veeraraghavan S. ; Miller, Robert J. ; Bu, Huiming

  • Author_Institution
    IBM SRDC at Albany Nanotech, Albany, NY, USA
  • Volume
    31
  • Issue
    7
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    650
  • Lastpage
    652
  • Abstract
    A methodology based on the transistor body effect is used to monitor inversion oxide thicknesses (Tinv´s) in high-κ/metal-gate undoped ultrathin-body short-channel SOI FINFETs. The extracted Tinv´s are benchmarked to independent capacitance-voltage (C-V) measurements. For the first time, device simulation is introduced to understand the fundamental difference in Tinv values extracted using the two techniques, which is driven by the inversion charge centroid at different bias conditions.
  • Keywords
    MOSFET; capacitance measurement; silicon-on-insulator; voltage measurement; capacitance-voltage measurement; high-κ/metal-gate undoped ultrathin-body short-channel SOI FINFET; inversion oxide thickness; transistor body effect; FINFETs; Fully depleted SOI (FDSOI); inversion oxide thickness; ultrathin body;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2049634
  • Filename
    5484648
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1516134