Title :
A quantum leap in laser emission
Author :
Huffaker, D. ; Deppe, D.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
5/1/1999 12:00:00 AM
Abstract :
Medium- and long-haul, high-speed fiber communication systems are dominated by the need for low optical loss and low dispersion, and these systems require laser diodes and photodiodes that emit and detect at 1.33 and 1.55 μm. InGaAs/GaAs quantum dots enable 1.3 μm wavelengths in GaAs-based lasers for fiber-optic communication.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical fibre dispersion; optical fibre losses; photodiodes; semiconductor lasers; semiconductor quantum dots; 1.33 micrometre; 1.55 micrometre; III-V semiconductors; InGaAs-GaAs; dispersion; high-speed fiber communication systems; laser diodes; optical loss; photodiodes; quantum dots; Diode lasers; Fiber lasers; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Optical fiber communication; Optical fiber losses; Photodiodes; Quantum dot lasers; Stimulated emission;
Journal_Title :
Circuits and Devices Magazine, IEEE
