DocumentCode
1516183
Title
A quantum leap in laser emission
Author
Huffaker, D. ; Deppe, D.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Volume
15
Issue
3
fYear
1999
fDate
5/1/1999 12:00:00 AM
Firstpage
8
Lastpage
13
Abstract
Medium- and long-haul, high-speed fiber communication systems are dominated by the need for low optical loss and low dispersion, and these systems require laser diodes and photodiodes that emit and detect at 1.33 and 1.55 μm. InGaAs/GaAs quantum dots enable 1.3 μm wavelengths in GaAs-based lasers for fiber-optic communication.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical fibre dispersion; optical fibre losses; photodiodes; semiconductor lasers; semiconductor quantum dots; 1.33 micrometre; 1.55 micrometre; III-V semiconductors; InGaAs-GaAs; dispersion; high-speed fiber communication systems; laser diodes; optical loss; photodiodes; quantum dots; Diode lasers; Fiber lasers; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Optical fiber communication; Optical fiber losses; Photodiodes; Quantum dot lasers; Stimulated emission;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.768521
Filename
768521
Link To Document