A PWM analog memory programming circuit for floating-gate MOSFETs with 75-μs programming time and 11-bit updating resolution

Author

Kinoshita, Shigeo ; Morie, Takashi ; Nagata, Makoto ; Iwata, Atsushi

Author_Institution

Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan

Volume

36

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1286

Lastpage

1290

Abstract

This paper describes a programming circuit for analog memory using pulsewidth modulation (PWM) signals and the circuit performance obtained from measurements using a floating-gate EEPROM device. This programming circuit attains both high programming speed and high precision. We fabricated the programming circuit using standard 0.6-μm CMOS technology and constructed an analog memory using the programming circuit and a floating-gate MOSFET. The measurement results indicate that the analog memory attains a programming time of 75 μs, an updating resolution of 11 bit, and a memory setting precision of 6.5 bit. This programming circuit can be used for intelligent information processing hardware such as self-learning VLSI neural networks as well as multilevel flash memory

Keywords

CMOS analogue integrated circuits; EPROM; MOSFET circuits; analogue storage; programmable circuits; pulse width modulation; 0.6 micron; 11 bit; 75 mus; CMOS technology; EEPROM device; PWM analog memory programming circuit; floating-gate MOSFET; programming time; updating resolution; Analog memory; CMOS technology; Circuit optimization; MOSFETs; Modulation coding; Nonvolatile memory; Pulse circuits; Pulse measurements; Pulse width modulation; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.938380

Filename

938380