DocumentCode :
1516316
Title :
Electronic Temperature Compensation of Lateral Bulk Acoustic Resonator Reference Oscillators Using Enhanced Series Tuning Technique
Author :
Lavasani, Hossein Miri ; Pan, Wanling ; Harrington, Brandon P. ; Abdolvand, Reza ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
47
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1381
Lastpage :
1393
Abstract :
This paper reports on the demonstration of series tuning for lateral micromechanical oscillators and its application for electronic temperature compensation of piezoelectric lateral bulk acoustic resonator (LBAR) micromechanical oscillators. Two aluminum nitride-on-silicon (AlN-on-Si) piezoelectric LBARs, one operating at 427 MHz (Rm ≈180 Ω, Qunloaded ≈ 1400) and the other operating at 541 MHz (Rm ≈ 55 Ω, Qunloaded ≈ 3000) are interfaced with a 13 mW three-stage tunable TIA implemented in 0.18 μm 1P6M CMOS process to sustain the oscillation. Recognizing the impact on the frequency tuning range due to the body capacitances appearing in parallel with the ports of the resonator, the TIA uses parasitic cancellation techniques to neutralize this effect and boost the tuning range of 427 MHz and 541 MHz oscillators, by as much as 12× to 810 ppm and 1,530 ppm, respectively, with negligible impact on the phase noise performance. The shunt parasitic capacitor is either resonated out with an active inductor or is cancelled out by using a single-terminal negative capacitor of equal value. However, the oscillator that uses negative capacitance parasitic cancellation yields larger tuning. This extended tuning range is used for temperature compensation. A 2 mW bandgap-based temperature compensation circuit which uses second-order parabolic approximation is fabricated on the same chip. Using this temperature compensation circuit has lowered the overall frequency drift of a 427 MHz tunable oscillator using negative capacitance cancellation from ±390 ppm to ±35 ppm in the -10°C to 70°C temperature range. The phase noise of this oscillator reaches -82 dBc/Hz at 1 kHz offset. The total phase noise variation for offset frequencies below 10 kHz is under 5 dB within the specified tuning range, and the best phase noise floor is under -147 dBc/Hz . Due- to the higher Q and lower insertion loss of the resonating tank, the 541 MHz oscillator achieves -86 dBc/Hz at 1 kHz offset, and lower phase noise floor of -158 dBc/Hz.
Keywords :
CMOS integrated circuits; acoustic resonators; crystal resonators; micromechanical resonators; oscillators; phase noise; 1P6M CMOS process; AlN-Si; LBAR micromechanical oscillators; active inductor; aluminum nitride-on-silicon piezoelectric LBAR; electronic temperature compensation; enhanced series tuning; frequency 427 MHz; frequency 541 MHz; frequency tuning range; lateral bulk acoustic resonator reference oscillators; lateral micromechanical oscillators; negative capacitance parasitic cancellation; phase noise; piezoelectric lateral bulk acoustic resonator; power 13 mW; second-order parabolic approximation; shunt parasitic capacitor; single-terminal negative capacitor; size 0.18 mum; temperature -10 degC to 70 degC; temperature compensation circuit; three-stage tunable TIA; Parasitic capacitance; Phase noise; Resonant frequency; Temperature distribution; Tuning; Active inductor; MEMS; electronic frequency tuning; micromechanical oscillator; micromechanical resonator; negative capacitor; negative impedance converter; parasitic cancellation; phase noise; piezoelectric resonator; reference oscillator; series tuning; sustaining amplifier; temperature compensation; tuning enhancement;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2192657
Filename :
6200000
Link To Document :
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