Title :
Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers
Author :
Lee, Y.H. ; Tell, B. ; Brown-Goebeler, K.F. ; Leibenguth, R.E. ; Mattera, V.D.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
Deep-red (770-nm) top-surface-emitting vertical-cavity AlGaAs lasers were fabricated and operated continuously at room temperature. An Al/sub 0.14/Ga/sub 0.86/As superlattice was used for an active-gain medium. Efficient current funneling was achieved by deep proton implantation. Continuous-wave (CW) threshold currents were 4.6 and 6.3 mA at 3.9- and 3.4-V bias for 10- and 15- mu m-diameter lasers, respectively. The maximum CW output power was >1.1 mW at room temperature without heat sink. Arrays of various top-surface-emitting lasers based on current funneling are expected to generate many applications for photonic switching, chip-to-chip communication, optical computing, and printing.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor laser arrays; 1.1 mW; 10 micron; 15 micron; 3.4 V; 3.9 V; 4.6 mA; 6.3 mA; 770 nm; AlGaAs superlattice lasers; CW lasing; active-gain medium; chip-to-chip communication; continuous wave; current funneling; deep proton implantation; deep-red lasing; diode laser arrays; optical computing; photonic switching; printing; room temperature; semiconductor; threshold currents; top-surface-emitting; vertical-cavity; Communication switching; Heat sinks; Optical arrays; Optical computing; Power generation; Protons; Superlattices; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
