Title :
Low-threshold, strained-layer, GaInP/AlGaInP GRINSCH visible diode lasers
Author :
Serreze, H.B. ; Chen, Y.C.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
Graded-index, separate-confinement heterostructure (GRlNSCH) semiconductor diode visible lasers employing a strained-layer GaInP single quantum well were fabricated from metalorganic chemical-vapor deposition (MOCVD)-grown epitaxial material. CW threshold current densities as low as 650 A/cm/sup 2/ were measured for uncoated, 1200- mu m-long, 15- mu m-wide ridge structures operating at 30 degrees C and emitting at 655-670 nm. A maximum output under quasi-CW conditions (100 mu s pulse length, 1% duty factor) as high as 320 mW/facet was achieved before catastrophic failure. This threshold current density is believed to be the lowest reported to date for visible light diode lasers.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; gradient index optics; indium compounds; semiconductor junction lasers; 30 C; 30 mus; 655 to 670 nm; CW threshold current densities; GRINSCH visible diode lasers; GaInP-AlGaInP; catastrophic failure; epitaxial material; graded index; metalorganic chemical-vapor deposition; pulse length; ridge structures; semiconductors; separate-confinement heterostructure; single quantum well; strained-layer; Chemical lasers; Diode lasers; Inorganic materials; Optical materials; Pulsed laser deposition; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Semiconductor materials; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
