Title :
Photon statistics and noise modeling of surface-emitting lasers
Author :
LaViolette, Kerry D. ; Liu, Pao-Lo
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
Abstract :
Langevin noise-driven rate equations are used to model typical surface-emitting (SE) lasers, producing photon statistics, relative intensity noise (RIN) as a function of frequency, and relaxation oscillation frequency. The differential equations were numerically solved with the computer simulation code written in C and compiled and run on a DEC 3100 workstation. Four minutes of computation time is required to simulate a SE laser biased above threshold at 1-ps step for 1- mu s duration. The results are in good agreement with the published data.<>
Keywords :
electron device noise; laser theory; semiconductor device models; semiconductor junction lasers; statistical analysis; 1 mus; Langevin noise-driven rate equations; above threshold biasing; computer simulation code; differential equations; noise modeling; photon statistics; relative intensity noise; relaxation oscillation frequency; surface-emitting lasers; Computational modeling; Equations; Frequency; Laser modes; Laser noise; Optical noise; Semiconductor device noise; Semiconductor lasers; Statistics; Surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
