Title :
Very-low-threshold, strained In/sub y/Ga/sub 1-y/As-GaAs quantum-well lasers defined by impurity-induced disordering
Author :
Zou, W.X. ; Merz, J.L. ; Fu, R.J. ; Hong, C.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
Strained In/sub y/Ga/sub 1-y/As-GaAs quantum-well (InGaAs-QW) stripe geometry lasers ( lambda approximately 9050 AA) were fabricated by impurity-induced disordering (IID) through self-aligned Si-Zn diffusion. Lasers exhibit very low threshold (I/sub th/=3.0 mA at room-temperature continuous operation) and good uniformity (>90% with I/sub th/<8 mA, >70% with I/sub th/=4+or-1 mA). The moderate blue shift of the lasing wavelength (250 A or 40 meV) suggests that the strained InGaAs-QW active layer can survive long-time high-temperature thermal annealing (850 degrees C, 8 h) required for Si diffusion.<>
Keywords :
III-V semiconductors; annealing; diffusion in solids; gallium arsenide; impurities; indium compounds; laser transitions; semiconductor junction lasers; semiconductor quantum wells; 850 degC; 9050 AA; III-V semiconductors; Si diffusion; continuous operation; impurity-induced disordering; lasing wavelength; long-time high-temperature thermal annealing; moderate blue shift; self-aligned Si-Zn diffusion; strained In/sub y/Ga/sub 1-y/As-GaAs quantum well stripe geometry lasers; threshold; Chemical lasers; Gallium arsenide; Geometrical optics; Laser modes; Optical device fabrication; Optical materials; Quantum well lasers; Resists; Threshold current; Zinc;
Journal_Title :
Photonics Technology Letters, IEEE
