Fabrication of a GaAs-AlGaAs GRIN-SCH SQW laser diode on silicon by epitaxial lift-off

Author

Pollentier, I. ; Buydens, L. ; Van Daele, Peter ; Demeester, P.

Author_Institution

Lab. of Electromagn. & Acoust., Gent Univ., Belgium

Volume

3

Issue

2

fYear

1991

Firstpage

115

Lastpage

117

Abstract

The epitaxial liftoff (ELO) of a GaAs-AlGaAs graded-index separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser diode and the subsequent transfer to a Si substrate are described. It is the first time that a layer structure containing Al/sub 0.60/Ga/sub 0.40/As has been lifted off, and the 5- mu m thin film was cleaved after ELO by a novel process, called wedge-induced facet cleaving (WFC). The pulsed operation performance of the ELO WFC laser was similar to that of conventionally processed GRIN-SCH SQW lasers. These results hold promise for integrating III-V short-cavity lasers on arbitrary substrates.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 5 micron; GRIN-SCH SQW laser diode; GaAs-AlGaAs; III-V short-cavity lasers; MOVPE; Si; diode laser integration; epitaxial lift-off; film cleaving; graded-index; laser diode fabrication; layer structure; pulsed operation; semiconductor; separate-confinement-heterostructure; single-quantum-well; substrate; thin film; vapour phase epitaxial growth; wedge-induced facet cleaving; Diode lasers; Etching; Integrated optics; Laser feedback; Optical device fabrication; Optical films; Optical recording; Printing; Silicon; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.76859

Filename

76859