Title :
Beam properties of AlGaAs power lasers with high-quality etched mirrors
Author :
Bona, G.L. ; Buchmann, P. ; Clauberg, R. ; Jaeckel, H. ; Vettiger, P. ; Voegeli, O. ; Webb, D.J.
Author_Institution :
IBM Res. Div., Ruschlikon, Switzerland
fDate :
5/1/1991 12:00:00 AM
Abstract :
High-quality etched mirrors for AlGaAs/GaAs power lasers for applications in optical storage have been fabricated by chemically assisted ion-beam etching (CAIBE). In order to ensure flat mirror facets of the ridge-waveguide lasers, a flared-waveguide end section is used. This results in a very slight mirror roughness of approximately 20 nm across the beam cross section, and yields excellent beam properties allowing diffraction-limited focusing up to 50-mW output power.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; mirrors; optical workshop techniques; semiconductor junction lasers; sputter etching; 50 mW; AlGaAs-GaAs; AlGaAs-GaAs power lasers; III-V semiconductors; beam cross section; beam properties; chemically assisted ion-beam etching; diffraction-limited focusing; flared-waveguide end section; flat mirror facets; high-quality etched mirrors; mirror roughness; optical storage; output power; ridge-waveguide lasers; Chemical lasers; Etching; Gallium arsenide; Geometrical optics; Laser beams; Laser modes; Mirrors; Optical devices; Optical waveguides; Power lasers;
Journal_Title :
Photonics Technology Letters, IEEE
