1.48- mu m high-power InGaAs/InGaAsP MQW LDs for Er-doped fiber emulsifiers

Author

Asano, Hideki ; Takano, Shinji ; Kawaradani, Masahiko ; Kitamura, Mitsuhiro ; Mito, Ikuo

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

3

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

415

Lastpage

417

Abstract

The device parameter optimization for 1.48 mu m InGaAs/InGaAsP multiple quantum well laser diodes (MQW-LDs) was reported. Approximately 800- mu m-long MQW-LDs with five wells were found to give a moderately low driving current for 100 mW light output, as well as high maximum power. 250 mW maximum CW power was achieved for a long-cavity (1800 mu m) MQW LD. The MQW LDs were shown to operate stably at 100 mW output power as well.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical pumping; semiconductor junction lasers; semiconductor quantum wells; 1.48 micron; 100 mW; 250 mW; Er-doped fiber emulsifiers; III-V semiconductors; InGaAs-InGaAsP multiple quantum well laser diodes; device parameter optimization; driving current; light output; maximum continuous wave power; pumping light sources; Absorption; Charge carrier density; Epitaxial growth; Indium gallium arsenide; Laboratories; National electric code; Power generation; Quantum well devices; Semiconductor devices; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93863

Filename

93863