DocumentCode
1516552
Title
Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering
Author
Miyazawa, T. ; Iwamura, H. ; Naganuma, M.
Author_Institution
NTT Opto-Electron. Lab., Kanagawa, Japan
Volume
3
Issue
5
fYear
1991
fDate
5/1/1991 12:00:00 AM
Firstpage
421
Lastpage
423
Abstract
InGaAs/InP multiple-quantum-well lasers were integrated with low-loss waveguides in the long-wavelength region using a cap-annealing disordering technique which does not require a regrowth process. The coupling efficiency between them does not increase the threshold current of the lasers. The optical loss in the waveguide was 7.8 cm/sup -1/ and was due to free-carrier absorption in the cladding layers.<>
Keywords
III-V semiconductors; annealing; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; semiconductor junction lasers; semiconductor quantum wells; III-V semiconductors; cap-annealing disordering technique; cladding layers; free-carrier absorption; integrated external cavity InGaAs-InP lasers; long-wavelength region; low-loss waveguides; multiple-quantum-well lasers; threshold current; Annealing; Chemical lasers; Indium gallium arsenide; Indium phosphide; Laser modes; Optical losses; Optical waveguides; Quantum well devices; Quantum well lasers; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.93865
Filename
93865
Link To Document