Narrow-linewidth (<200 kHz) operation of 1.5- mu m butt-jointed multiple-quantum-well distributed Bragg reflector laser

Author

Matsui, Y. ; Kunii, T. ; Horikawa, H. ; Kamijoh, T.

Author_Institution

Oki Electric Ind. Co. Ltd., Tokyo, Japan

Volume

3

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

424

Lastpage

426

Abstract

Linewidths as narrow as 200 kHz were achieved with a 1.5 mu m butt-jointed multiquantum-well (MQW) distributed Bragg reflector (DBR) laser. A low threshold current of 8 mA and a high output power of 28 mW were also realized, as well as narrow-linewidth operation. The device was fabricated by a five-step metalorganic vapor-phase epitaxy (MOVPE) process. These results were realized by introducing a high-quality MQW active layer, a long DBR region with a very small coupling coefficient, and a butt-jointed region with high coupling efficiency.<>

Keywords

distributed Bragg reflector lasers; laser transitions; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; spectral line breadth; vapour phase epitaxial growth; 1.5 micron; 28 mW; 8 mA; butt-jointed multiple-quantum-well distributed Bragg reflector laser; coupling coefficient; coupling efficiency; metalorganic vapor-phase epitaxy; narrow-linewidth operation; output power; threshold current; Distributed Bragg reflectors; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Laser feedback; Optical feedback; Power generation; Quantum well devices; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93866

Filename

93866