Title :
A new InGaAs/InGaAsP delta -strained multiple-quantum-well laser grown by chemical-beam epitaxy
Author :
Yang, L. ; Wu, M.C. ; Chen, Y.K. ; Tsang, W.T. ; Chu, S.N.G. ; Sergent, A.M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
The authors propose and demonstrate a delta -strained multiple-quantum-well laser in which the quantum well is composed of a thin strained layer ( approximately AA In/sub x/Ga/sub 1-x/As) sandwiched by lattice-matched (In/sub 0.53/Ga/sub 0.47/As) layers. A threshold current density of 510 A/cm/sup 2 /was obtained from broad-area lasers with four delta -strained quantum wells and a cavity length of 3 mm, with an emission wavelength near 1.55 mu m. The use of a delta -strained quantum well provides an additional degree of freedom in optimizing the amount of strain and thickness of the active layer in improving the device performance.<>
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 1.55 micron; III-V semiconductors; In/sub x/Ga/sub 1-x/As-In/sub 0.53/Ga/sub 0.47/As; InGaAs-InGaAsP; active layer; cavity length; chemical-beam epitaxy; delta -strained multiple-quantum-well laser; device performance; emission wavelength; thickness; thin strained layer; threshold current density; Capacitive sensors; Chemical lasers; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Power generation; Quantum well devices; Quantum well lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
