Broad-band emission from a multiple asymmetric quantum-well light-emitting diode

Author

Hager, H. ; Hong, C.S. ; Mantz, J. ; Chan, E. ; Booher, D. ; Figueroa, L.

Author_Institution

Boeing Aerosp. & Electron., Seattle, WA, USA

Volume

3

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

436

Lastpage

438

Abstract

The authors demonstrate broadband light-emitting diode (LED) emission, with a full-width-at-half-maximum (FWHM) values >100 nm, based on concurrent multiple-state transitions in a single active layer containing two asymmetric quantum wells in the GaAs/AlGaAs material system. This spectral width is much broader (by a factor of 2.5) than that for commercial edge-emitting LEDs in the GaAs/AlGaAs system. The LED device is well suited for broadband source applications in wavelength-multiplexing-based, fibre-optic sensor network systems.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; optical communication equipment; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductors; broadband emission; broadband source applications; concurrent multiple-state transitions; full-width-at-half-maximum; multiple asymmetric quantum-well light-emitting diode; single active layer; spectral width; wavelength multiplexing based fibre optic sensor network systems; Gallium arsenide; Light emitting diodes; Optical coupling; Optical fiber devices; Optical fiber sensors; Quantum well devices; Substrates; Superluminescent diodes; Telecommunication network reliability; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93870

Filename

93870