Title :
Broad-band emission from a multiple asymmetric quantum-well light-emitting diode
Author :
Hager, H. ; Hong, C.S. ; Mantz, J. ; Chan, E. ; Booher, D. ; Figueroa, L.
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
The authors demonstrate broadband light-emitting diode (LED) emission, with a full-width-at-half-maximum (FWHM) values >100 nm, based on concurrent multiple-state transitions in a single active layer containing two asymmetric quantum wells in the GaAs/AlGaAs material system. This spectral width is much broader (by a factor of 2.5) than that for commercial edge-emitting LEDs in the GaAs/AlGaAs system. The LED device is well suited for broadband source applications in wavelength-multiplexing-based, fibre-optic sensor network systems.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; optical communication equipment; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductors; broadband emission; broadband source applications; concurrent multiple-state transitions; full-width-at-half-maximum; multiple asymmetric quantum-well light-emitting diode; single active layer; spectral width; wavelength multiplexing based fibre optic sensor network systems; Gallium arsenide; Light emitting diodes; Optical coupling; Optical fiber devices; Optical fiber sensors; Quantum well devices; Substrates; Superluminescent diodes; Telecommunication network reliability; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
