Title :
Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHz
Author :
Wakita, Koichi ; Kotaka, Isamu ; Mitomi, Osamu ; Asai, Hiromitsu ; Kawamura, Yuichi
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
Abstract :
Modulated light spectra were measured in long-wavelength InGaAs-InAlAs multiple-quantum-well intensity modulators under 30-GHz large-signal modulations. The linewidth broadening factor alpha is determined from the relation between the intensity modulation index and the sideband strength relative to the carrier. The minimum alpha value is estimated to be 0.70 at 1.54 mu m, which is almost the same as the lowest value so far reported in a bulk Franz-Keldysh modulator. This is significantly lower than what is obtained from direct-intensity modulation of injection lasers, making this a useful device for application to high-bit-rate long-haul optical communication systems.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical modulation; semiconductor quantum wells; spectral line breadth; 1.54 micron; 30 GHz; InGaAs-InAlAs; bulk Franz-Keldysh modulator; high-bit-rate; intensity modulation index; intensity modulators; large-signal modulations; linewidth broadening factor; long-haul optical communication systems; low-chirp modulation; modulated light spectra; multiple-quantum-well; optical modulators; sideband strength; Capacitance; Chirp modulation; Frequency; High speed optical techniques; Indium compounds; Indium gallium arsenide; Intensity modulation; Optical fiber communication; Optical modulation; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE
