A field induced guide-antiguide modulator of GaAs-AlGaAs

Author

Huang, T.C. ; Chung, Y. ; Young, D.B. ; Dagli, N. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

3

Issue

2

fYear

1991

Firstpage

141

Lastpage

143

Abstract

A guide-antiguide modulator of GaAs-AlGaAs using the electric-field-induced waveguide concept was demonstrated. The device was formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding was accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio was measured to be 20:1 with a propagation loss of the on-state of about 5 dB/mm.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical losses; optical modulation; optical waveguide components; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductor; electric-field-induced waveguide concept; field induced guide-antiguide modulator; lateral guiding; on-off ratio; p-i-n MQW surface; propagation loss; reverse biasing; switching; Electrodes; Electrooptic effects; Intensity modulation; Optical diffraction; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Propagation losses; Switches;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.76868

Filename

76868