Title :
A field induced guide-antiguide modulator of GaAs-AlGaAs
Author :
Huang, T.C. ; Chung, Y. ; Young, D.B. ; Dagli, N. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A guide-antiguide modulator of GaAs-AlGaAs using the electric-field-induced waveguide concept was demonstrated. The device was formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding was accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio was measured to be 20:1 with a propagation loss of the on-state of about 5 dB/mm.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical losses; optical modulation; optical waveguide components; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductor; electric-field-induced waveguide concept; field induced guide-antiguide modulator; lateral guiding; on-off ratio; p-i-n MQW surface; propagation loss; reverse biasing; switching; Electrodes; Electrooptic effects; Intensity modulation; Optical diffraction; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Propagation losses; Switches;
Journal_Title :
Photonics Technology Letters, IEEE
