High-efficiency waveguide InGaAs pin photodiode with bandwidth of over 40 GHz

Author

Kato, Kazutoshi ; Hata, Susumu ; Kozen, Atsuo ; Yoshida, Jun-ichi ; Kawano, Kenji

Author_Institution

NTT Opto-electron. Lab., Kanagawa, Japan

Volume

3

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

473

Lastpage

474

Abstract

A waveguide pin photodiode structure was designed in consideration of both wide bandwidth and highly efficient coupling to the fiber. The device performed with a bandwidth higher than 40 GHz, and had high responsivity of 0.55 A/W (external quantum efficiency of 44%), showing superiority of bandwidth-efficiency product over the surface-illuminated photodiodes in the ultrahigh-frequency region. Based on the authors´ calculations, coupling efficiency can be increased much more with an optimized layer structure.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical waveguides; p-i-n diodes; photodiodes; 40 GHz; 44 percent; InGaAs; bandwidth-efficiency product; coupling efficiency; external quantum efficiency; fibre coupling; highly efficient coupling; optimized layer structure; responsivity; semiconductors; surface-illuminated photodiodes; ultrahigh-frequency region; waveguide pin photodiode structure; wide bandwidth; Absorption; Bandwidth; Indium gallium arsenide; Optical coupling; Optical fiber communication; Optical fiber devices; Optical fiber losses; Optical surface waves; Optical waveguides; PIN photodiodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93883

Filename

93883