Title :
A novel electronically switched four-channel receiver using InAlAs-InGaAs MSM-HEMT technology for wavelength-division-multiplexing
Author :
Chang, G.-K. ; Hong, W.P. ; Bhat, R. ; Nguyen, C.K. ; Shirokmann, H. ; Wang, L. ; Gimlett, J.L. ; Young, J. ; Lin, C. ; Hayes, J.R.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
A novel, electronically integrated, four-channel optical receiver is demonstrated which is designed for electronic channel selection of different wavelength channels in a wavelength-division-multiplexing-based optical network. The receiver consists of four InAlAs-InGaAs metal-semiconductor-metal (MSM) photodetectors that can be independently switched on or off electronically by a digital signal. An optical extinction ratio of 20 dB for the MSM detector was observed. The sensitivity of this optoelectronic integrated circuit receiver is -25.2 dBm at 1.2 Gb/s data rate.<>
Keywords :
III-V semiconductors; aluminium compounds; frequency division multiplexing; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; multiplexing equipment; optical communication equipment; photodetectors; receivers; 1.2 Gbit/s; InAlAs-InGaAs; MSM-HEMT technology; digital signal; electronic channel selection; electronic switching; electronically switched four-channel receiver; metal-semiconductor-metal; optical extinction ratio; optical network; optoelectronic integrated circuit receiver; photodetectors; semiconductors; sensitivity; wavelength channels; wavelength-division-multiplexing; Detectors; HEMTs; Indium compounds; Optical filters; Optical receivers; Optical sensors; Optoelectronic devices; Passive optical networks; Photodetectors; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
