Title :
Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design
Author :
Sattu, Ajay Kumar ; Yang, Jinwei ; Gaska, Remis ; Khan, Md Bilal ; Shur, Michael ; Simin, Grigory
Author_Institution :
Sensor Electron. Technol., Columbia, SC, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
We report on the small-signal and power performance of AlGaN/GaN RF switches with novel gate design incorporating regular metal gate deposited over a “slow” gate electrode formed by a low-conducting InGaN film. SPDT RF switch MMICs using hybrid “fast/slow” gate AlGaN/GaN MOSHFETs show superior transmission characteristics while maintaining the same high-power and high-linearity performance as the switches based on conventional MOSHFETs.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; high electron mobility transistors; microwave switches; wide band gap semiconductors; AlGaN-GaN; III-Nitride RF switches; MMIC; MOSHFET; hybrid fast/slow gate design; signal performance; Aluminum gallium nitride; Gallium nitride; Insertion loss; Logic gates; MMICs; MOSHFETs; Radio frequency; AlGaN/GaN; IP3; MMIC; SPDT; heterostructure field-effect transistors (HFETs);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2138686
