Analysis of the sign reversal of the photodetected signal response in a multielectrode semiconductor optical amplifier

Author

Sharaiha, Ammar ; Guegan, Mikael

Author_Institution

Lab. RES, Ecole Nat. d´´Ingenieurs de Brest, France

Volume

19

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1185

Lastpage

1193

Abstract

We present a theoretical analysis and experimental results for a two-electrode (200 μm×300 μm) 1.5-μm semiconductor optical amplifier (SOA) used in photodetection. The experimental results show that at a particular operating point regarding current and optical input power, a sign reversal of the photodetected signal response, and a frequency bandwidth shape modification are obtained at the SOA front contact. These results are confirmed by simulation and explained by the developed theoretical photodetection expression obtained by small signal analysis from the rate equation

Keywords

electrodes; infrared detectors; laser theory; semiconductor device models; semiconductor optical amplifiers; 1.5 mum; 200 mum; 300 mum; IR detectors; frequency bandwidth shape modification; multielectrode semiconductor optical amplifier; operating point; optical input power; photodetected signal response; photodetection; rate equation; sign reversal; small signal analysis; two-electrode semiconductor optical amplifier; Analytical models; Charge carrier density; Numerical models; Optical amplifiers; Photodetectors; Photonics; Reflectivity; Semiconductor optical amplifiers; Signal analysis; Stimulated emission;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.939800

Filename

939800