• DocumentCode
    1517303
  • Title

    Mechanical interactions and their effects on chemical mechanical polishing

  • Author

    Shan, Lei ; Zhou, Chunhong ; Danyluk, Steven

  • Author_Institution
    George W. Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    14
  • Issue
    3
  • fYear
    2001
  • fDate
    8/1/2001 12:00:00 AM
  • Firstpage
    207
  • Lastpage
    213
  • Abstract
    Mechanical interactions, such as contact stress and fluid pressure are of extreme importance in silicon wafer polishing, especially for the wafer-scale planarity of the finished surfaces. In this paper, the measurements of interfacial fluid pressure and friction, as well as their dependence on some major process variables, are presented. A nonuniform subambient fluid pressure was measured, and the resulting wafer/pad contact stress, obtained by combining the effects of both applied normal load and interfacial fluid pressure, is determined. An analytical model was developed to predict the magnitude and distribution of the interfacial fluid pressure. The results of polishing experiments show good evidence of the effects of this subambient fluid pressure on with in-wafer nonuniformity (WIWNU). By properly designing the polishing process variables, the fluid pressure may be tailored, and a relatively uniform material removal can be achieved
  • Keywords
    chemical mechanical polishing; elemental semiconductors; silicon; sliding friction; stress effects; applied normal load; chemical mechanical polishing; friction; interfacial fluid pressure; mechanical interactions; nonuniform subambient fluid pressure; process variables; relatively uniform material removal; wafer polishing; wafer-scale planarity; wafer/pad contact stress; Chemicals; Conducting materials; Dielectric materials; Friction; Integrated circuit interconnections; Planarization; Pressure measurement; Silicon; Stress; Surface finishing;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.939815
  • Filename
    939815