DocumentCode
1517303
Title
Mechanical interactions and their effects on chemical mechanical polishing
Author
Shan, Lei ; Zhou, Chunhong ; Danyluk, Steven
Author_Institution
George W. Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
14
Issue
3
fYear
2001
fDate
8/1/2001 12:00:00 AM
Firstpage
207
Lastpage
213
Abstract
Mechanical interactions, such as contact stress and fluid pressure are of extreme importance in silicon wafer polishing, especially for the wafer-scale planarity of the finished surfaces. In this paper, the measurements of interfacial fluid pressure and friction, as well as their dependence on some major process variables, are presented. A nonuniform subambient fluid pressure was measured, and the resulting wafer/pad contact stress, obtained by combining the effects of both applied normal load and interfacial fluid pressure, is determined. An analytical model was developed to predict the magnitude and distribution of the interfacial fluid pressure. The results of polishing experiments show good evidence of the effects of this subambient fluid pressure on with in-wafer nonuniformity (WIWNU). By properly designing the polishing process variables, the fluid pressure may be tailored, and a relatively uniform material removal can be achieved
Keywords
chemical mechanical polishing; elemental semiconductors; silicon; sliding friction; stress effects; applied normal load; chemical mechanical polishing; friction; interfacial fluid pressure; mechanical interactions; nonuniform subambient fluid pressure; process variables; relatively uniform material removal; wafer polishing; wafer-scale planarity; wafer/pad contact stress; Chemicals; Conducting materials; Dielectric materials; Friction; Integrated circuit interconnections; Planarization; Pressure measurement; Silicon; Stress; Surface finishing;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.939815
Filename
939815
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