Scintillation Properties of In Doped ZnO With Different In Concentrations

Using the liquid phase epitaxy (LPE) method we prepared the high crystalline quality In $^{3+}$ doped ZnO thin film scintillators with different Indium concentration of 26, 53, and 141 ppm. We evaluated their optical properties and radiation response, because there are few reports of radiation response of In-doped ZnO scintillator. In order to imitate the scintillator application, we measured the alpha-ray excited luminescence spectra. The emission bands peaking around 375 and 500 nm were observed, and with an increment of In $^{3+}$ , the intensity of both bands decreases. In the measurement of light yield, we optically coupled the sample with PMT R7600 by a silicone grease, and excitation was provided by $^{241}$ Am 5.5 MeV $\alpha$ -rays. The samples showed of about 10% of the light yield of BGO scintillator which was used as a reference. Under the same excitation the scintillation decay was measured in all the samples as well.