Title :
RF and microwave frequency properties of a reverse-biased thick switching p-i-n diode
Author :
Drozdovskaia, Lioudmila
fDate :
8/1/2001 12:00:00 AM
Abstract :
The frequency response of the dc reverse-bias voltage keeping high-impedance p-i-n diode in low-distortion state is studied using different mathematical and theoretical models. This paper discusses the comparison between the theoretical and experimental results
Keywords :
microwave diodes; microwave switches; p-i-n diodes; power semiconductor switches; semiconductor device models; DC reverse bias voltage; RF properties; computer simulation; frequency response; high-power semiconductor control device; impedance model; microwave properties; thick p-i-n diode switch; Computer simulation; Impedance; Microwave devices; P-i-n diodes; Radio frequency; Schottky diodes; Semiconductor diodes; Silicon; Switches; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
