DocumentCode :
1517609
Title :
Radiation Hardness of 
Memristive Junctions
Author :
Tong, William M. ; Yang, J.Joshua ; Kuekes, Philip J. ; Stewart, Duncan R. ; Williams, R.Stanley ; DeIonno, Erica ; King, Everett E. ; Witczak, Steven C. ; Looper, Mark D. ; Osborn, Jon V.
Author_Institution :
Inf. & Quantum Syst. Lab., Hewlett Packard Labs., Palo Alto, CA, USA
Volume :
57
Issue :
3
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
1640
Lastpage :
1643
Abstract :
Semiconducting TiO2 displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2 devices in the on and off resistance states to 45 Mrad(Si) of ~1-MeV gamma radiation and 23 Mrad(Si) of 941-MeV Bi-ions under zero bias conditions and none of the devices were degraded. These results suggest that TiO2 memristive devices are good candidates for radiation hard electronics for aerospace.
Keywords :
avionics; gamma-rays; memristors; radiation hardening; titanium compounds; TiO2; gamma radiation; hysteretic behavior; memristive junctions; radiation hard electronics; radiation hardness; semiconducting displays; zero bias conditions; Atomic measurements; Degradation; Dielectric materials; Displays; Electron traps; Hysteresis; Laboratories; Nonvolatile memory; Satellites; Titanium; Memristor; non-volatie memory; rad-hard; titanium oxide;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2045768
Filename :
5485102
Link To Document :
