A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits

Author

Lai, Yeong-Lin ; Hsu, Kuo-Hua

Author_Institution

Dept. of Mech. Eng., Nat. Changhua Univ. of Educ., Taiwan

Volume

49

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1410

Lastpage

1418

Abstract

A new pinched-off cold FET method to extract the parasitic capacitances of FETs is proposed in this paper. The method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinched-off cold FETs. The parasitic gate capacitance (C_pg) and the parasitic drain capacitance (C _pd) of FETs are extracted using the linear regression technique associated with the frequency responses of Y-parameters. The extraction method can be applied to the small-signal equivalent-circuit modeling of the FETs including MESFETs, heterojunction FETs, and high-electron-mobility transistors. According to the new analytical method, the simulated S-parameters exhibit great agreement with the measured S-parameters for the equivalent-circuit models of FETs

Keywords

S-parameters; capacitance; equivalent circuits; microwave field effect transistors; semiconductor device models; two-port networks; MESFET; S-parameters; Y-parameters; depletion layer model; frequency response; heterojunction FET; high electron mobility transistor; linear regression; microwave FET; parameter extraction; parasitic capacitance; pinched-off cold-FET method; small-signal equivalent circuit; two-port network; Analytical models; FETs; Frequency; HEMTs; Heterojunctions; Linear regression; MESFETs; MODFETs; Parasitic capacitance; Scattering parameters;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.939921

Filename

939921