• DocumentCode
    1517709
  • Title

    Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier

  • Author

    Fatehi, Hossein ; Emami, Siamak Dawazdah ; Zarifi, Atiyeh ; Zahedi, Fatemeh Zahra ; Mirnia, Seyed Edriss ; Zarei, Arman ; Ahmad, Harith ; Harun, Sulaiman Wadi

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Malaya, Kuala Lumpur, Malaysia
  • Volume
    48
  • Issue
    8
  • fYear
    2012
  • Firstpage
    1052
  • Lastpage
    1058
  • Abstract
    Due to the tremendous growth in applications for fiber laser in medical science, sensor solution, and light detection and ranging system at 1.8 to 2-μm region, more research efforts have been directed toward developing highly efficient broadband fiber amplifiers in this range. In order to amplify this region, Thulium-Bismuth-doped fiber amplifier (TBDFA) is proposed in conjunction with 800-nm pumping. Optimal Thulium ion concentration of 4.17 × 1026 ion/m3 and Bismuth ion concentration of 2.08 × 1026 ion/m3 together with low phonon energy of germanate glass lead to the highest energy transfer rates. Effective energy transfer mechanism from Bismuth to Thulium in addition to the cross relaxation process between Thulium ions results in higher amplification, efficiency, and super broadband amplification in TBDFA. We analytically solve the rate equations of TBDFA including the effect of energy transfer in order to calculate the broadband amplifier gain.
  • Keywords
    bismuth; optical fibre amplifiers; thulium; bismuth ion concentration; broadband thulium-bismuth-doped fiber amplifier; cross relaxation process; energy transfer mechanism; fiber laser; germanate glass; highest energy transfer rates; highly efficient broadband fiber amplifiers; light detection; medical science; optimal thulium ion concentration; phonon energy; ranging system; rate equations; sensor solution; super broadband amplification; wavelength 1.8 mum to 2 mum; wavelength 800 nm; Absorption; Bismuth; Energy exchange; Equations; Ions; Mathematical model; Optical fiber amplifiers; 2-$mu{rm m}$ regions; Thulium-Bismuth; energy transfer; optical amplifier;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2012.2199739
  • Filename
    6200826