• DocumentCode
    1517837
  • Title

    Light Emitting and Laser Diodes in the Ultraviolet

  • Author

    Parbrook, Peter James ; Wang, Tao

  • Author_Institution
    Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
  • Volume
    17
  • Issue
    5
  • fYear
    2011
  • Firstpage
    1402
  • Lastpage
    1411
  • Abstract
    The production of ultraviolet light emitting and laser diodes depends critically on the reduction of defects in the material, particularly threading dislocations. Methods to reduce the defect density using planar substrates, and no ex situ patterning are reported and their potential discussed.
  • Keywords
    dislocations; integrated optics; light emitting diodes; semiconductor lasers; defect density; defect reduction; laser diodes; planar substrates; threading dislocations; ultraviolet light emitting diodes; Absorption; Aluminum gallium nitride; Epitaxial growth; Gallium nitride; Light emitting diodes; Substrates; X-ray scattering; Dislocations; laser; light emitting diode; metalorganic vapor phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2011.2126563
  • Filename
    5768058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1517837