Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

Author

Theodorou, Christoforos G. ; Tsormpatzoglou, Andreas ; Dimitriadis, Charalabos A. ; Khan, Shahrukh A. ; Hatalis, Miltiadis K. ; Jomaah, Jalal ; Ghibaudo, Gerard

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

Volume

32

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

898

Lastpage

900

Abstract

The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low drain current range. The noise spectra show generation-recombination (g-r) noise at drain currents I_d <; 5 nA, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher drain currents, a pure 1/f noise is observed. It is shown that the carrier number fluctuations are responsible for the 1/f noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.

Keywords

1/f noise; carrier density; gallium compounds; indium compounds; thin film transistors; zinc compounds; 1/f noise; InGaZnO; bottom-gate amorphous IGZO; carrier detrapping; carrier number fluctuations; carrier trapping; conducting channel; drain current range; generation-recombination noise; low-frequency noise; noise spectra; thin-film transistors; Frequency measurement; Logic gates; Low-frequency noise; Silicon; Thin film transistors; Amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs); carrier number fluctuation; generation–recombination (g–r) noise; low-frequency noise (LFN);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2143386

Filename

5768061