DocumentCode :
1517857
Title :
Characterization of Contact Discharge Between Small-Capacitance Devices
Author :
Soda, Yutaka ; Oda, Tetsuji
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Volume :
48
Issue :
4
fYear :
2012
Firstpage :
1189
Lastpage :
1194
Abstract :
The giant-magnetoresistive head suffers magnetic damage from electrostatic discharge (ESD) current on the order of 10 mA and thermal damage from ESD energy on the order of 0.5 nJ. The discharge between 2-pF capacitors at 10 V gave a peak current of 34 mA, and the discharge between 100-pF capacitors at 100 V reached 1.5 A. The peak current arose on the order of picofarads and was approximately maximized at the same value of both capacitors. Theoretical energy loss was estimated by the difference between the potential energies prior to and following the discharges. The energy loss was 0.05 nJ for 2-pF capacitors at 10 V and increased in excess of 0.5 nJ for greater than 20-pF capacitors. Therefore, the discharge between picofarad capacitances tends to cause the magnetic damage, and increasing the capacitance causes the thermal damage. Comparison of the potential energy loss and the current energy derived that the contact resistance varied from more than 200 to few ohms as the voltage and the energy loss increased.
Keywords :
capacitance; contact resistance; electrostatic discharge; ESD energy; capacitors; contact discharge characterization; contact resistance; electrostatic discharge current; energy loss; giant magnetoresistive head; magnetic damage; peak current; picofarad capacitance; small capacitance device; thermal damage; Capacitance; Capacitors; Contact resistance; Discharges; Electrostatic discharges; Fault location; Contact discharge; contact resistance; electrostatic discharge (ESD); energy loss; magnetic damage; magnetic head; peak current; thermal damage;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2012.2199954
Filename :
6200850
Link To Document :
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