• DocumentCode
    1517947
  • Title

    Four models of lateral current spreading in double-heterostructure stripe-geometry lasers

  • Author

    Papannareddy, R. ; Ferguson, Warren E., Jr. ; Butler, Jerome K.

  • Author_Institution
    Southern Methodist Univ., Dallas, TX, USA
  • Volume
    24
  • Issue
    1
  • fYear
    1988
  • Firstpage
    60
  • Lastpage
    65
  • Abstract
    Four models of current spreading in double-heterostructure stripe-geometry lasers, both with and without a zinc diffused cap, are presented and compared. These models range in complexity from a simple analytic model to a more complex consistent model. Results show that each of the four models predicts essentially the same current spreading and carrier diffusion in the active layer.<>
  • Keywords
    carrier mobility; semiconductor junction lasers; Zn diffused cap; carrier diffusion; double-heterostructure stripe-geometry lasers; lateral current spreading; Current density; DH-HEMTs; Equations; Geometry; Laser modes; P-n junctions; Predictive models; Threshold current; Voltage; Zinc;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.94
  • Filename
    94