DocumentCode :
1517947
Title :
Four models of lateral current spreading in double-heterostructure stripe-geometry lasers
Author :
Papannareddy, R. ; Ferguson, Warren E., Jr. ; Butler, Jerome K.
Author_Institution :
Southern Methodist Univ., Dallas, TX, USA
Volume :
24
Issue :
1
fYear :
1988
Firstpage :
60
Lastpage :
65
Abstract :
Four models of current spreading in double-heterostructure stripe-geometry lasers, both with and without a zinc diffused cap, are presented and compared. These models range in complexity from a simple analytic model to a more complex consistent model. Results show that each of the four models predicts essentially the same current spreading and carrier diffusion in the active layer.<>
Keywords :
carrier mobility; semiconductor junction lasers; Zn diffused cap; carrier diffusion; double-heterostructure stripe-geometry lasers; lateral current spreading; Current density; DH-HEMTs; Equations; Geometry; Laser modes; P-n junctions; Predictive models; Threshold current; Voltage; Zinc;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.94
Filename :
94
Link To Document :
بازگشت