An HBT unilateral model to design distributed amplifiers

Author

Paoloni, Claudio ; D´Agostino, Stefano

Author_Institution

Dept. of Electron. Eng., Rome Univ., Italy

Volume

47

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

795

Lastpage

798

Abstract

A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithic-microwave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A graphical design procedure for HBT distributed amplifiers is also proposed. This method is based on a set of generalized charts and represents a simple and fast design tool for designers. Comparisons between the performance of specially designed HBT distributed amplifiers and the results obtained using the HBT unilateral model demonstrate the validity of the proposed approach

Keywords

MMIC amplifiers; bipolar MMIC; distributed amplifiers; equivalent circuits; heterojunction bipolar transistors; integrated circuit design; microwave bipolar transistors; semiconductor device models; HBT MMIC amplifiers; HBT parasitics; HBT unilateral model; distributed amplifier design; graphical design procedure; heterojunction bipolar transistor; Attenuation; Cutoff frequency; Distributed amplifiers; Distributed computing; Equivalent circuits; FETs; Field effect MMICs; HEMTs; Heterojunction bipolar transistors; Predictive models;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.769352

Filename

769352