Title :
ASIC for SDD-Based X-Ray Spectrometers
Author :
De Geronimo, Gianluigi ; Rehak, Pavel ; Ackley, Kim ; Carini, Gabriella ; Chen, Wei ; Fried, Jack ; Keister, Jeffrey ; Li, Shaorui ; Li, Zheng ; Pinelli, Donald A. ; Siddons, D. Peter ; Vernon, Emerson ; Gaskin, Jessica A. ; Ramsey, Brian D. ; Tyson, Trev
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
fDate :
6/1/2010 12:00:00 AM
Abstract :
We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm2 and dissipates with the sensor biased about 15 mW/cm2. As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44°C show a FWHM of 145 eV at the 5.9 keV peak of a 55Fe source, and less than 80 eV on a test-pulse line at 200 eV.
Keywords :
X-ray spectrometers; application specific integrated circuits; nuclear electronics; position sensitive particle detectors; readout electronics; silicon radiation detectors; 55Fe source; ASIC reads out signal; FWHM; SDD-based X-Ray spectrometer; analog memory; application-specific integrated circuit; baseline stabilization; electron volt energy 200 eV; high-order shaping; high-resolution X-ray spectrometer; integrated field effect transistor; low-noise charge amplification; low-power tristatable low-voltage differential signaling; pile-up rejector; pixelated silicon drift detector; temperature -44 degC; Analog memory; Anodes; Application specific integrated circuits; Detectors; Extraterrestrial measurements; FETs; Lifting equipment; Silicon; Space technology; Spectroscopy; ASIC; LVDS; PUR; SDD; charge sharing; high rate;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2044809