• DocumentCode
    1518314
  • Title

    Optimization of overhanging-metal microstrip detectors: test and simulation

  • Author

    Passeri, Daniele ; Ciampolini, Paolo ; Bilei, Gian Mario ; Angarano, Matteo M. ; Moscatelli, Francesco

  • Author_Institution
    Dipt. di Ingegneri Elettronica e dell´´Inf., Perugia Univ., Italy
  • Volume
    48
  • Issue
    3
  • fYear
    2001
  • fDate
    6/1/2001 12:00:00 AM
  • Firstpage
    249
  • Lastpage
    253
  • Abstract
    The adoption of overhanging-metal contacts has been suggested as an effective means to limit breakdown risks in heavy-damaged high-voltage biased microstrip detectors. In this paper, the influence of the overhang on device noise parameters is analyzed, with particular reference to the interstrip capacitance. Data have been collected on a set of detectors featuring variable overhang extensions and different width/pitch ratios, and numerical simulation has been exploited to provide physical interpretation of the experimental findings. In particular, the nontrivial dependence of interstrip capacitance over geometrical parameters is discussed. By looking at leakage currents and charge collection as well, it is shown that limited-extension overhangs still have highly beneficial effects on the breakdown properties while having no practical drawbacks on the detector performance
  • Keywords
    capacitance; leakage currents; optimisation; semiconductor device noise; silicon radiation detectors; Si; Si microstrip detector; charge collection; interstrip capacitance; leakage current; noise; overhanging-metal contacts; overhanging-metal microstrip detectors; width/pitch ratios; Breakdown voltage; Capacitance; Detectors; Electric breakdown; Microstrip components; Mutual coupling; Numerical simulation; Silicon; Strips; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.940059
  • Filename
    940059