DocumentCode
1518314
Title
Optimization of overhanging-metal microstrip detectors: test and simulation
Author
Passeri, Daniele ; Ciampolini, Paolo ; Bilei, Gian Mario ; Angarano, Matteo M. ; Moscatelli, Francesco
Author_Institution
Dipt. di Ingegneri Elettronica e dell´´Inf., Perugia Univ., Italy
Volume
48
Issue
3
fYear
2001
fDate
6/1/2001 12:00:00 AM
Firstpage
249
Lastpage
253
Abstract
The adoption of overhanging-metal contacts has been suggested as an effective means to limit breakdown risks in heavy-damaged high-voltage biased microstrip detectors. In this paper, the influence of the overhang on device noise parameters is analyzed, with particular reference to the interstrip capacitance. Data have been collected on a set of detectors featuring variable overhang extensions and different width/pitch ratios, and numerical simulation has been exploited to provide physical interpretation of the experimental findings. In particular, the nontrivial dependence of interstrip capacitance over geometrical parameters is discussed. By looking at leakage currents and charge collection as well, it is shown that limited-extension overhangs still have highly beneficial effects on the breakdown properties while having no practical drawbacks on the detector performance
Keywords
capacitance; leakage currents; optimisation; semiconductor device noise; silicon radiation detectors; Si; Si microstrip detector; charge collection; interstrip capacitance; leakage current; noise; overhanging-metal contacts; overhanging-metal microstrip detectors; width/pitch ratios; Breakdown voltage; Capacitance; Detectors; Electric breakdown; Microstrip components; Mutual coupling; Numerical simulation; Silicon; Strips; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.940059
Filename
940059
Link To Document