Title :
A new optoelectronic device based on modulation-doped heterostructure: demonstration of functions as both lateral current injection laser and junction field effect transistor
Author :
Honda, Y. ; Suemune, I. ; Yasuhira, N. ; Yamanishi, M.
Author_Institution :
Dept. of Phys. Electron., Hiroshima Univ., Japan
Abstract :
A new type of optoelectronic semiconductor device which utilizes the modulation-doped (MOD) heterostructure is demonstrated. The device operates not only as a lateral current injection (LCI) laser but also as a junction field-effect transistor (JFET) based on the MOD heterostructure. This first demonstration of the structural compatibility of the LCI laser with the MODFET is one step toward optoelectronic integration utilizing a common two-dimensional electron gas.<>
Keywords :
integrated optoelectronics; junction gate field effect transistors; semiconductor junction lasers; common two-dimensional electron gas; junction field effect transistor; lateral current injection laser; modulation-doped heterostructure; optoelectronic device; structural compatibility; Electrons; Epitaxial layers; FETs; Gallium arsenide; Gas lasers; HEMTs; Laser theory; Optoelectronic devices; Power lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
