Title :
Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector
Author :
Sugiho, M. ; Kamae, T. ; Makishima, K. ; Takahashi, T. ; Murakami, T. ; Tashiro, M. ; Fukazawa, Y. ; Iyomoto, N. ; Ozawa, H. ; Kubota, A. ; Nakazawa, K. ; Yamaoka, K. ; Kokubun, M. ; Ota, N. ; Tanihata, C. ; Isobe, N. ; Terada, Y. ; Matsumoto, Y. ; Uchiya
Author_Institution :
Dept. of Phys., Tokyo Univ., Japan
fDate :
6/1/2001 12:00:00 AM
Abstract :
The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, Si p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively
Keywords :
X-ray astronomy; X-ray detection; p-i-n photodiodes; position sensitive particle detectors; silicon radiation detectors; 10 to 60 keV; 2 mm; 21.5 mm; ASTRO-E; Si; Si p-i-n diodes; electric field; hard X-ray detector; large area p-i-n diode; phoswich counter; spatially dependent response; spatially resolved response; spectral response; Electric variables measurement; Electrodes; Energy measurement; Energy resolution; Extraterrestrial measurements; P-i-n diodes; Radiation detectors; Spatial resolution; Tail; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
