$\hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As}$ RTD–MOSFET Millimeter-Wave Wavelet Generator

We report on the fabrication of a self-aligned regrown In_0.53 Ga_0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.