High-Speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZO TFTs

Author

Geng, Di ; Kang, Dong Han ; Seok, Man Ju ; Mativenga, Mallory ; Jang, Jin

Author_Institution

Dept. of Inf. Display & Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea

Volume

33

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1012

Lastpage

1014

Abstract

We report a high-speed and low-voltage-driven shift register utilizing self-aligned coplanar amorphous-indium-gallium-zinc-oxide thin-film transistors (a -IGZO TFTs). The a-IGZO TFTs exhibit field-effect mobility, threshold voltage, and gate-voltage swing of 24.7 cm²/V·s, 0.2 V, and 118 mV/dec, respectively. The rise and fall times of the shift register at the supply voltage (V_DD) of 1 V are 8 and 7 μs, respectively, and the output pulse is free from distortion or ripple. For a V_DD of 15 V, the clock frequency of the shift register approaches 500 kHz, making it applicable to high-resolution active-matrix displays.

Keywords

display devices; field effect transistors; gallium compounds; indium compounds; shift registers; thin film transistors; zinc compounds; In₂O₃-Ga₂O₃-ZnO; clock frequency; field-effect mobility; frequency 500 kHz; gate-voltage swing; high-resolution active-matrix display; high-speed driven shift register; low-voltage-driven shift register; self-aligned coplanar TFT; self-aligned coplanar thin-film transistor; threshold voltage; time 7 mus; time 8 mus; voltage 0.2 V; voltage 1 V; voltage 15 V; Capacitance; Clocks; Logic gates; Shift registers; Thin film transistors; Amorphous-indium–gallium–zinc–oxide (IGZO) (a -IGZO) thin-film transistor (TFT) (a-IGZO TFT); coplanar; low-voltage driven; self-aligned process; shift register;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2194133

Filename

6202322