Title :
Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes
Author :
Shi, Min ; He, Jin ; Zhang, Lining ; Ma, Chenyue ; Zhou, Xingye ; Lou, Haijun ; Zhuang, Hao ; Wang, Ruonan ; Li, Yongliang ; Ma, Yong ; Wu, Wen ; Wang, Wenping ; Chan, Mansun
Author_Institution :
Sch. of Electron. & Inf., Nantong Univ., Nantong, China
fDate :
7/1/2011 12:00:00 AM
Abstract :
This letter describes the formation of one-time-programmable (OTP) memory using standard contact fuse and polysilicon diode in a standard CMOS technology. Programming of the contact fuse is achieved by applying a high current pulse to destroy the contact. Compared with other existing OTP technologies, the proposed approach has the advantage of zero additional mask, no additional processing step, compact structure, and low programming voltage. The described OTP has been demonstrated in a 0.18-μm CMOS technology from TSMC with a cell size of 2.33 μm2 . The contact fuse can be programmed with a voltage of 3 V and a current of 2.4 mA.
Keywords :
CMOS memory circuits; electric fuses; electrical contacts; masks; programmable circuits; semiconductor diodes; OTP technology; Si; TSMC; current 2.4 mA; one-time-programmable memory; polysilicon diode; size 0.18 mum; standard CMOS processes; voltage 3 V; zero-mask contact fuse; Arrays; CMOS integrated circuits; Electron devices; Fuses; Laboratories; Programming; Silicides; Contact fuse; memory; one-time programmable (OTP); standard CMOS;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2147754
