A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension

Author

Sung, Woongje ; Van Brunt, Edward ; Baliga, B.J. ; Huang, Alex Q.

Author_Institution

Future Renewable Electr. Energy Delivery & Manage. Syst. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

32

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

880

Lastpage

882

Abstract

A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.

Keywords

p-i-n diodes; rectifiers; semiconductor junctions; silicon compounds; MFZ-JTE technique; PiN diode; PiN rectifiers; SiC; activation anneal condition; breakdown voltage; edge termination technique; high-voltage devices; implantation dose; multiple-floating-zone junction termination extension; single pattern-and-implant step; voltage 10 kV; Aluminum; Boron; Implants; Junctions; Periodic structures; Silicon carbide; 4H-SiC; Edge termination; PiN diode; junction termination extension (JTE);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2144561

Filename

5770178