• DocumentCode
    1518767
  • Title

    Comparison of pMOSFET total dose response for Co-60 gammas and high-energy protons

  • Author

    Pease, Ronald L. ; Simons, Mayrant ; Marshall, Paul

  • Author_Institution
    RLP Res. Inc., Albuquerque, NM, USA
  • Volume
    48
  • Issue
    3
  • fYear
    2001
  • fDate
    6/1/2001 12:00:00 AM
  • Firstpage
    908
  • Lastpage
    912
  • Abstract
    The ionizing radiation response of pMOSFETs used as dosimeters (RADFETs) is compared for Co-60 gammas and high-energy protons. For comparable Co-60 and proton doses, RADFET response for high-energy protons (60-200 MeV) was found to be only 65-85% of their Co-60 response. This difference is not fully understood but is shown to be partially a result of increased columnar recombination in SiO2 for high-energy proton irradiation
  • Keywords
    dosimeters; gamma-ray detection; power MOSFET; proton detection; 60 to 200 MeV; 60Co gamma rays; RADFETs; SiO2; columnar recombination; dosimeters; high-energy proton irradiation; high-energy protons; ionizing radiation response; pMOSFET total dose response; Degradation; Dielectrics; Ionizing radiation; Laboratories; Linear circuits; MOSFET circuits; Microelectronics; Protons; Radiation effects; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.940131
  • Filename
    940131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1518767