Anomalous Dependence of Threshold Voltage Mismatch of Short-Channel Transistors

In contrast to the generally accepted expectation that mismatch is monotonically related to doping level for uniformly doping channels, apparently anomalous results in which short-channel low-doped devices have larger mismatch than higher doped high-threshold devices are shown. However, these results are fully explained and comprehended in the context of device design and random dopant fluctuation, and the correlation of short-channel effect with mismatch suggests yet another manner in which fully depleted undoped-body devices will offer better variation than classic scaled dopant-driven transistors, addressing a critical problem in new technology directions.