• DocumentCode
    1518831
  • Title

    A 9 mW, Q-Band Direct-Conversion I/Q Modulator in SiGe BiCMOS Process

  • Author

    Gupta, Arpit K. ; Kim, Joohwa ; Asbeck, Peter ; Buckwalter, James F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
  • Volume
    22
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    327
  • Lastpage
    329
  • Abstract
    This letter demonstrates a low-power, Q-band, direct-conversion I/Q modulator. The modulator consumes 9 mW power from a 1 V supply and delivers - 9.3 dBm RF power at 39 GHz. The modulator exhibits an EVM of 5.3% for 16QAM at 3 Msymbols/s. The circuit is fabricated in 0.12 μm SiGe BiCMOS process and occupies an area of 1.5 mm2.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; digital-analogue conversion; field effect MIMIC; modulators; quadrature amplitude modulation; BiCMOS process; EVM; Q-band direct-conversion I-Q modulator; QAM; SiGe; digital-to-analog converters; frequency 39 GHz; power 9 mW; size 0.12 mum; voltage 1 V; Baseband; Mixers; Quadrature amplitude modulation; Radio frequency; Silicon germanium; System-on-a-chip; Direct conversion transmitter; I/Q modulator; Q-band;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2012.2197379
  • Filename
    6202368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1518831