DocumentCode
1518848
Title
Characterisation and modelling of noise parameters of SiC MESFETs
Author
Eriksson, J. ; Rorsman, N. ; Nilsson, P-Å ; Zirath, H.
Author_Institution
Dept. of Microwave Electron., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
35
Issue
7
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
574
Lastpage
575
Abstract
Noise parameter measurements and a model for 2×100 μm SiC MESFETs fabricated in two different processes are presented. The noise characteristics of SiC MESFETs are well described by a standard noise model. The minimum measured noise figure was 2.0 and 2.7 dB with an associated gain of 7.8 and 12 dB, respectively, at 3 GHz for the two processes
Keywords
Schottky gate field effect transistors; semiconductor device models; semiconductor device noise; semiconductor materials; silicon compounds; 12 dB; 2.0 dB; 2.7 dB; 3 GHz; 7.8 dB; SiC; SiC MESFET; gain; model; noise figure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990426
Filename
769491
Link To Document