Optimization of Germanium (Ge) $\hbox {n}^{+}/\hbox {p}$ and $\hbox {p}^{+}/\hbox {n}$ Junction Diodes and Sub 380

In this paper, we optimize and investigate Ge n⁺/p and p⁺/n junction diodes formed by Co metal-induced dopant activation technique at the activation temperature range between 300 ^°C and 420 ^°C in terms of on/ off-current ratio. Combining this low-temperature n⁺/p and p⁺/n junction formation technique with a low-temperature gate stack comprised of Al/Al₂O₃/GeO₂ by ozone oxidation technique, we demonstrate n- and p-channel Ge metal-oxide-semiconductor field-effect transistors (MOSFETs), respectively, at sub-360 ^°C and 380 ^°C. This low-temperature Ge MOSFET process can be utilized to integrate Ge complementary metal-oxide-semiconductor devices above interconnect layers for monolithic 3-D integrated circuits.