Title :
All-optical NAND logic device operating at 1.51-1.55 μm in Er-doped aluminosilicate glass
Author_Institution :
Dept. of Inf. & Control Eng., Toyota Technol. Inst., Nagoya, Japan
fDate :
4/1/1999 12:00:00 AM
Abstract :
An all-optical NAND logic device derived from the negative nonlinear absorption effect has been demonstrated in erbium-doped aluminosilicate glass using 1510-1550 nm laser diodes. The reversed-phase transmitted waveforms were observed at modulation frequencies from 0.2 kHz to 1.0 GHz. The device has a novel possibility for expanding the capacity of optical networks and computers
Keywords :
aluminosilicate glasses; erbium compounds; logic gates; nonlinear optics; optical logic; optical modulation; semiconductor lasers; 0.2 kHz to 1.0 GHz; 1.51 to 1.55 micrometre; Er2O3-Al2O3-SiO2 ; all-optical NAND logic device; capacity; laser diodes; modulation frequencies; negative nonlinear absorption effect; optical computers; optical logic gates; optical networks; reversed-phase transmitted waveforms;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990397
