Thermal Storage of AlGaN/GaN High-Electron-Mobility Transistors

Author

Zhao, Miao ; Wang, Xinhua ; Liu, Xinyu ; Huang, Jun ; Zheng, Yingkui ; Wei, Ke

Author_Institution

Microwave Devices & Integrated Circuits Dept., Chinese Acad. of Sci., Beijing, China

Volume

10

Issue

3

fYear

2010

Firstpage

360

Lastpage

365

Abstract

The thermal stability and electrical characteristics of GaN high-electron-mobility transistors (HEMTs) were investigated. Storage tests were carried out at 400°C for 48 h to study the ohmic-contact stability by means of the transmission line model. It was found that Ti/Al/Ni/Au ohmic contacts were stable and had superior thermal performance, but the Schottky contact may be more sensitive to the temperature. After thermal storage for 48 h at 400°C, the Schottky barrier height was increased, and the ideality factor decreased. Two types of isolation structures were also investigated under the same condition. DC tests were implemented to study the phenomenon and provide feedback for potential process improvements.

Keywords

Schottky barriers; aluminium compounds; gallium compounds; high electron mobility transistors; ohmic contacts; semiconductor device reliability; semiconductor device testing; thermal stability; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN high-electron-mobility transistors; DC tests; Schottky barrier height; Schottky contact; Ti-Al-Ni-Au; isolation structures; ohmic-contact stability; storage tests; temperature 400 degC; thermal stability; thermal storage; time 4 h; transmission line model; Aluminum gallium nitride; Electric variables; Gallium nitride; Gold; HEMTs; MODFETs; Ohmic contacts; Schottky barriers; Testing; Thermal stability; AlGaN/GaN high-electron-mobility transistor (HEMT); Schottky contact; ohmic contacts; reliability; thermal storage;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2010.2051671

Filename

5487385