Title :
Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET
Author :
Dang, X.Z. ; Welty, R.J. ; Qiao, D. ; Asbeck, P.M. ; Lau, S.S. ; Yu, E.T. ; Boutros, K.S. ; Redwing, J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
An AlGaN/GaN HFET incorporating a piezoelectrically enhanced two-layer barrier structure has been fabricated and characterised. The gate leakage current was observed to be suppressed by one order of magnitude, compared to that in a conventional AlGaN/GaN HFET. Breakdown voltages in the piezoelectrically enhanced and conventional HFET structures are ~100 V and have positive temperature coefficients
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; leakage currents; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; 100 V; AlGaN-GaN; AlGaN/GaN HFET; breakdown voltages; characterisation; fabrication; gate leakage current suppression; piezoelectrically enhanced barrier; positive temperature coefficients; two-layer barrier structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990282
