Title :
Fabrication technology of polysilicon resistors using novel mixed process for analogue CMOS applications
Author :
Lee, D.W. ; Roh, T.M. ; Park, H.S. ; Kim, J. ; Koo, J.G. ; Kim, D.Y.
Author_Institution :
Lab. of Microelectron. Technol., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
4/1/1999 12:00:00 AM
Abstract :
A new mixed doping technology, in which arsenic ions were implanted into a phosphorus-doped polysilicon film, has been developed to obtain extremely low temperature coefficient of resistance (TCR) polysilicon resistors. For the same sheet resistance (R) value of 75 Ω/□, the TCR of the polysilicon resistor fabricated by the proposed process was ~4.3 times lower (112 ppm/°C) than that of the conventional phosphorus-doped polysilicon resistor (479 ppm/°C)
Keywords :
CMOS analogue integrated circuits; arsenic; elemental semiconductors; integrated circuit technology; ion implantation; phosphorus; resistors; semiconductor doping; silicon; thermal stability; As ion implantation; P-doped polysilicon film; Si:P,As; analogue CMOS applications; fabrication technology; low TCR resistors; mixed doping process; polysilicon resistors; temperature coefficient of resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990313
