A novel on-wafer resistive noise source

Author

Béland, Paul ; Labonté, Sylvain ; Roy, Langis ; Stubbs, Malcolm

Author_Institution

Ottawa Univ., Ont., Canada

Volume

9

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

227

Lastpage

229

Abstract

We describe a novel on-wafer resistive noise source (ORNS) suitable for noise parameter characterization of microwave devices using the cold noise power measurement technique. The noise source can enhance measurement accuracy by providing a calibrated noise temperature directly at the device reference plane. A procedure to determine the excess noise ratio of the noise source is presented. Noise figure measurements performed up to 40 GHz with the on-wafer noise source and with a commercial coaxial noise source are in good agreement, thereby validating the technique. The novel source is effective as a noise standard up to millimeter-wave frequencies

Keywords

calibration; electric noise measurement; integrated circuit testing; measurement standards; microwave integrated circuits; microwave measurement; millimetre wave integrated circuits; millimetre wave measurement; noise generators; thermal noise; thin film resistors; 40 GHz; Al₂O₃; EHF; MIC; MM-wave IC; SHF; alumina substrate; calibrated noise temperature; cold noise power measurement technique; excess noise ratio; measurement accuracy enhancement; microwave devices; millimeter-wave frequencies; noise figure measurements; noise parameter characterization; noise standard; onwafer resistive noise source; Coaxial components; Microwave devices; Microwave theory and techniques; Millimeter wave measurements; Noise figure; Noise measurement; Performance evaluation; Power measurement; Signal to noise ratio; Temperature;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.769529

Filename

769529